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Latest Products
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SMD MOSFETS SOT-23 Series 2N7002K
$0.0885
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SMD MOSFETS SOT-23 Series BSS84
$0.0885
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SMD MOSFETS SOT-23 Series SI2301S-2.3A
$0.1655
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SMD MOSFETS SOT-23 Series SI2301-3A
$0.2055
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ESD Diode SOD-323 Series SD15C
$0.1895
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- Series: TO -220F
- Drain-Source Breakdown Voltage: 650V Min.
- Continuous Drain Current: 10A
- Power Dissipation: 40W
- Junction-to-ambient Thermal Resistance: 110°C/W
- Gate-Source Leakage Current: +/-100nA
- Junction Temperature: +150°C
SMD Plastic-Encapsulate MOSFETS, TO -220F series, 3 Pins, MDD10N65F Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 10A, Junction Temperature: +150°C,
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- Series: TO -220F
- Drain-Source Breakdown Voltage: 650V Min.
- Continuous Drain Current: 12A
- Power Dissipation: 42W
- Junction-to-ambient Thermal Resistance: 110°C/W
- Gate-Source Leakage Current: +/-100nA
- Junction Temperature: +150°C
SMD Plastic-Encapsulate MOSFETS, TO -220F series, 3 Pins MDD12N65F Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 12A, Junction Temperature: +150°C,
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- Series: TO -220F
- Drain-Source Breakdown Voltage: 650V Min.
- Continuous Drain Current: 4.0A
- Power Dissipation: 32W
- Junction-to-ambient Thermal Resistance: 62.5°C/W
- Gate-Source Leakage Current: +/-100nA
- Junction Temperature: +150°C
SMD Plastic-Encapsulate MOSFETS, TO-220F series, 3 Pins MDD4N65F Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 4.0A, Junction Temperature: +150°C
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- Series: TO -220F
- Drain-Source Breakdown Voltage: 650V Min.
- Continuous Drain Current: 7.0A
- Power Dissipation: 39W
- Junction-to-ambient Thermal Resistance: 62.5°C/W
- Gate-Source Leakage Current: +/-100nA
- Junction Temperature: +150°C
SMD Plastic-Encapsulate MOSFETS, TO -220F series, 3 Pins MDD7N65F Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 7.0A, Junction Temperature: +150°C
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- Series: TO-252 series
- Drain-Source Breakdown Voltage: 650V Min.
- Continuous Drain Current: 4.0A
- Power Dissipation: 77W
- Junction-to-ambient Thermal Resistance: 110°C/W
- Gate-Source Leakage Current: +/-100nA
- Junction Temperature: +150°C
SMD Plastic-Encapsulate MOSFETS, TO -252 series, 3 Pins MDD4N65D Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 4.0A, Junction Temperature: +150°C
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- Series: TO-252 series
- Drain-Source Breakdown Voltage: 650V Min.
- Continuous Drain Current: 7.0A
- Power Dissipation: 100W
- Junction-to-ambient Thermal Resistance: 110°C/W
- Gate-Source Leakage Current: +/-100nA
- Junction Temperature: +150°C
SMD Plastic-Encapsulate MOSFETS, TO -252 series, 3 Pins MDD7N65D Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 7.0A, Junction Temperature: +150°C
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- Series: SOT-23
- Drain-Source Voltage: 60V Min.
- Continuous Drain Current: 0.50A
- Power Dissipation: 0.3W
- Gate-body Leakage Current: +/-10uA
- Junction Temperature: 150°C
SMD Plastic-Encapsulate MOSFETS, SOT-23 series, 3 pads, 2N7002K Type, 60V N-Channel Enhancement Mode MOSFET, Reverse Working Voltage : 12V, Peak Pulse Power per (8/20μs): 350 Watts
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- Series: SOT-23
- Drain-Source Breakdown Voltage: 30V
- Continuous Drain Current: 5.8A
- Power Dissipation: 1.5W
- Gate-source Leakage Current: +/-100nA
SMD Plastic-Encapsulate MOSFETS, SOT-23 series, 3 pads, AO3400 -5.8AType, 30V N-Channel enhancement Mode Field effect, Transistor Continuous Drain Current: 5.8A, Maximum Power Dissipation: 1.5W
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- Series: SOT-23
- Drain-Source Breakdown Voltage: -50V Min.
- Continuous Drain Current: -0.13A
- Power Dissipation: 225mW
- Gate-body Leakage Current: +/-5.0uA
SMD Plastic-Encapsulate MOSFETS, SOT-23 series, 3 pads, BSS84 Type, -50V P-Channel MOSFET, Continuous Drain Current: -130mA, Maximum Power Dissipation: 225mW
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- Series: SOT-23
- Drain-Source Breakdown Voltage: -20V Min.
- Continuous Drain Current @T A =25 °C: -3.0A
- Power Dissipation @ T A = 25°C: 1.2W
- Gate-source Leakage Current: +/-100nA
SMD Plastic-Encapsulate MOSFETS, SOT-23 series, 3 pads, SI2301-3A Type, 20V P-Channel MOSFET, Continuous Drain Current: -3.0A, Maximum Power Dissipation: 1.2 Watts
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- Series: SOT-23
- Drain-Source Breakdown Voltage: -20V Min.
- Continuous Drain Current @T A =25 °C: -2.3A
- Power Dissipation @ T A = 25°C: 1.2W
- Gate-source Leakage Current: +/-100nA
SMD Plastic-Encapsulate MOSFETS, SOT-23 series, 3 pads, SI2301S-2.3A Type, 20V P-Channel MOSFET, Continuous Drain Current: -2.3A, Maximum Power Dissipation: 1.2 Watts