MOSFETS, 3Pins, TO-220F Series MDD7N65F

SMD Plastic-Encapsulate MOSFETS, TO -220F series, 3 Pins MDD7N65F Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 7.0A, Junction Temperature: +150°C

Key Features:
  • Series: TO -220F
  • Drain-Source Breakdown Voltage: 650V Min.
  • Continuous Drain Current: 7.0A
  • Power Dissipation: 39W
  • Junction-to-ambient Thermal Resistance: 62.5°C/W
  • Gate-Source Leakage Current: +/-100nA
  • Junction Temperature: +150°C

$1.6550

30905 in stock
SKU TO220FMDD7N65F
Original MPNMDD7N65F
Datasheet Data Sheet
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Description

SMD Plastic-Encapsulate MOSFETS, TO -220F series, 3 Pins MDD7N65F Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 7.0A, Junction Temperature: +150°C

• Ultra Low Gate Charge
• Low Reverse Transfer Capacitance
• Fast Switching Capability
• Avalanche Energy Tested
• Improved dv/dt Capability and High Ruggedness

APPLICATION

• High Efficiency Switch Mode Power Supplies
• Electronic Lamp Ballasts Based On Half Bridge
• LED Power Supplies

Specification

Series

TO -220F

Part Status

Active

Supplier Device Package

TO -220F series, 3 Pins

Drain-Source Breakdown Voltage

650V Min.

Continuous Drain Current

7.0A

Power Dissipation

39W

Junction-to-ambient Thermal Resistance

62.5°C/W

Gate-Source Leakage Current

+/-100nA

Gate-source threshold voltage

4.0V Max.

Junction Temperature

+150°C

Mounting Type

Surface Mount

Package / Case

SMD Plastic-Encapsulate MOSFETS, 3 Pins

RoHS Status

RoHS III Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

HTSUS

8541.21.0075

Standard Package (MPQ)

1000pcs/Box, Quantity entered must be multiple of 1000

NCNR

Non-Cancelable/Non-Returnable