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MOSFETS, 3Pins, TO-220F Series MDD10N65F

SMD Plastic-Encapsulate MOSFETS, TO -220F series, 3 Pins, MDD10N65F Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 10A, Junction Temperature: +150°C,

Key Features:
  • Series: TO -220F
  • Drain-Source Breakdown Voltage: 650V Min.
  • Continuous Drain Current: 10A
  • Power Dissipation: 40W
  • Junction-to-ambient Thermal Resistance: 110°C/W
  • Gate-Source Leakage Current: +/-100nA
  • Junction Temperature: +150°C
See Full Specification

$1.6550

18168 in stock
SKU TO220FMD10N65F
Original MPNMDD10N65F
Datasheet Data Sheet
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Description

SMD Plastic-Encapsulate MOSFETS, TO -220F series, 3 Pins, MDD10N65F Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 10A, Junction Temperature: +150°C,

• Ultra Low Gate Charge
• Low Reverse Transfer Capacitance
• Fast Switching Capability
• Avalanche Energy Tested
• Improved dv/dt Capability and High Ruggedness

APPLICATION

• High Efficiency Switch Mode Power Supplies
• Electronic Lamp Ballasts Based On Half Bridge
• LED Power Supplies

Specification

Series

TO -220F
Part Status

Active
Supplier Device Package

TO -220F series, 3 Pins
Drain-Source Breakdown Voltage

650V Min.
Continuous Drain Current

10A
Power Dissipation

40W
Junction-to-ambient Thermal Resistance

110°C/W
Gate-Source Leakage Current

+/-100nA
Gate-source threshold voltage

4.0V Max.
Junction Temperature

+150°C
Mounting Type

Surface Mount
Package / Case

SMD Plastic-Encapsulate MOSFETS, 3 Pins
RoHS Status

RoHS III Compliant
Moisture Sensitivity Level (MSL)

1 (Unlimited)
REACH Status

REACH Unaffected
HTSUS

8541.21.0075
Standard Package (MPQ)

1000pcs/Box, Quantity entered must be multiple of 1000
NCNR

Non-Cancelable/Non-Returnable

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